Description
- Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits.
- Features: Collector–Emitter Voltage: VCEX = 1500V Glass Passivated Base–Collector Junction Forward Bias Safe Operating Area @ 50µs = 20A, 300V Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A
