Description
Description:
The NTE2311 is a silicon NPN transistor in a TO−3P type case designed for use in high voltage, high
speed switching applications.
Features:
- High Blocking Capability: VCEX = 1000V
- Wide Surge Area: ICSM = 55A @ 350V
Applications:
- Switchmode Power Supply
- DC/DC and DC/AC Converters
- Motor Control
Absolute Maximum Ratings:
- (TC = +25C unless otherwise specified)
- Collector−Emitter Voltage, VCEO …………………………………………….. 450V
- Collector−Emitter Voltage (VBE = −2.5V), VCEX ………………………………… 1000V
- Emitter−Base Voltage, VEBO …………………………………………………. 7V
- Collector Current (tp 5ms), IC
- Continuous ………………………………………………………… 15A
- Peak …………………………………………………………….. 30A
- Base Current (tp 5ms), IB
- Continuous …………………………………………………………. 4A
- Peak …………………………………………………………….. 20A
- Power Dissipation, Ptot
- TC = +25C ………………………………………………………. 150W
- TC = +60C ………………………………………………………. 115W
- Operating Junction Temperature Range, TJ ……………………………. −65 to +175C
- Thermal Resistance, Junction−to−Case, RthJC ………………………………… 1C/W
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