Si,Fast Recovery Diode

Description

• Features:
• Low Reverse Leakage
• High Forward Surge Current Capability

• Maximum Ratings and Electrical Characteristics:
• (TA = +25C unless otherwise specified. Single
• phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%)
• Peak Repetitive Reverse Voltage, VRRM ……………………………………… 1500V
• Maximum RMS Voltage, VRMS …………………………………………….. 1050V
• Maximum DC Blocking Voltage, VDC ………………………………………… 1500V
• Maximum Average Rectified Forward Current (.375” (9.5mm) lead length), I(AV) ……… 500mA
• Peak Forward Surge Current, IFSM
• (8.3ms single half sine−wave superimposed on rated load) 30A ……………………
• Maximum Instantaneous Forward Voltage (IF = 500mA), VF ……………………….. 2.5V
• Maximum DC Reverse Current (VR = 1500V), IR
• TA = +25C ……………………………………………………….. 5mA
• TA = +100C ……………………………………………………… 50mA
• Maximum Reverse Recovery Time (Note 1), trr ………………………………… 500ns
• Typical Junction Capacitance (Note 2), CJ …………………………………….. 15pF
• Typical Thermal Resistance, Junction−to−Ambient (Note 3), RthJA ……………….. 50C/W
• Operating Temperature Range, Topr ………………………………….. −65 to +150C
• Storage Temperature Range, Tstg …………………………………… −65 to +150C
• Lead Temperature (During soldering, .375” (9.5mm) from case, 10sec max), TL ……… +250C