Description
Features:
- Very Low Noise
- Low Gate Current
- Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
- Gate−Drain Voltage, VGDO ………………………………………………… −50V
- Gate−Source Voltage, VGSO ……………………………………………….. −50V
- Drain−Source Voltage (VDS = −2V), VDSX ………………………………………. 50V
- Drain Current, ID ……………………………………………………….. 20mA
- Gate Current, IG ………………………………………………………… 10mA
- Total Device Dissipation, PT …………………………………………….. 250mW
- Operating Junction Temperature, TJ ……………………………………….. +125C
- Storage Temperature Range, Tstg …………………………………… −55 to +125C
